|
|
Other articles related with "back-gate voltage"：
|
|
118106 |
Yan-Kun Yang(杨燕琨), Tie-Feng Yang(杨铁锋), Hong-Lai Li(李洪来), Zhao-Yang Qi(祁朝阳), Xin-Liang Chen(陈新亮), Wen-Qiang Wu(吴文强), Xue-Lu Hu(胡学鹿), Peng-Bin He(贺鹏斌), Ying Jiang(蒋英), Wei Hu(胡伟), Qing-Lin Zhang(张清林), Xiu-Juan Zhuang(庄秀娟), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练) |
| |
|
High performance photodetectors based on high quality InP nanowires |
| |
|
|
Chin. Phys. B
2016 Vol.25 (11): 118106-118106
[Abstract]
(834)
[HTML 1 KB]
[PDF 1003 KB]
(401)
|
|
|
37305 |
Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
|
Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor |
| |
|
|
Chin. Phys. B
2012 Vol.21 (3): 37305-037305
[Abstract]
(1113)
[HTML 1 KB]
[PDF 1679 KB]
(24121)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
